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| (R) STD83003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4") THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix "-1") 3 2 1 1 3 APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES s IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STD83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STD93003, its complementary PNP transistor. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, IB = 0.75 A, t p < 10s, T j < 150 C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value 700 400 V (BR)EBO 1.5 3 0.75 1.5 20 -65 to 150 150 Unit V V V A A A A W o C o C October 2002 1/8 STD83003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV V (BR)EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter-Base Breakdown Voltage (I C = 0) Test Conditions V CE = 700V V CE = 700V I E = 10 mA T j = 125 o C 12 Min. Typ. Max. 1 5 18 Unit mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 10 mA L = 25 mH I C = 0.5 A I C = 0.35 A I C = 0.5 A I C = 10 mA I C = 0.35 A IC = 1 A I C = 0.35 A I B1 = 70 mA T p 25 s I C = 0.5 A V BE(off) = -5 V V clamp = 300 V I B = 0.1 A I B = 50 mA I B = 0.1 A V CE = 5 V V CE = 5 V V CE = 5 V V CC = 125 V I B2 = -70 mA (see figure 2) I B1 = 0.1 A L = 10 mH (see figure 1) 400 V 0.5 1 1 10 16 4 V V V 25 32 tr ts tf ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time 1.5 100 2.2 0.2 450 90 2.9 ns s s ns ns Pulsed: Pulse duration = 300s, duty cycle = 1.5 % 2/8 STD83003 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/8 STD83003 Resistive Load Fall Time Resistive Load Storage Time Inductive Load Fall Time Inductive Load Storage Time Reverse Biased SOA 4/8 STD83003 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/8 STD83003 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10 o mm TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 MIN. 0.087 0.035 0.028 0.025 0.204 2.20 0.90 0.70 0.64 5.20 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.031 10 o 0.039 P032N_E 6/8 STD83003 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 7/8 STD83003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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